Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
نویسندگان
چکیده
منابع مشابه
High quality AlGaN epilayers grown on sapphire using SiNx interlayers
We have investigated the optimization of Al0.2Ga0.8N layers directly grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The quality of the AlGaN epilayers was improved by in situ nano-masking employing ultra-thin SiNx interlayers. Transmission electron microscopy (TEM) investigations reveal an enormous reduction of edge-type dislocations by SiNx nano-masking. Furthermore, formation ...
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1 Department of Physics and Astronomy, Georgia State University, 29 Peachtree Center Ave, Atlanta, GA 30303, USA 2 Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany 3 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA 4 Dept. Electrical & Computer Engineering, University of North Carolina Charlotte, Charlotte, NC 28...
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Growth optimization of Si doped AlGaN epilayers—with 20%, 30% and 45%Al content— grown on AlGaN-sapphire by MOVPE was investigated. We could realize n-type carrier concentrations from about 2 × 10 cm to 1 × 10 cm. The layers with high levels of dopants suffer from crack formation. Therefore, we used a short period super lattice to manage the strain between the doped layer and the undoped buffer...
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ژورنال
عنوان ژورنال: Cumhuriyet Science Journal
سال: 2018
ISSN: 2587-2680
DOI: 10.17776/csj.453576